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This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices.
Designed for graduate textbook adoptions and reference needs, this new edition includes:
Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations.
A Solutions Manual is available from the editorial department.
I decided to write this review after reading the previous reviews to this book. Apparently, a couple of the reviewers think of this book as a text book, which it is not. Even though the first edition was published in 1968, and the second in 1981, this book is still a very useful reference to anyone who works in the field of semiconductor device physics. The author presupposes a good amount of knowledge, and does not try to lead the reader "by hand" through all the details in the derivation of the mathematical expressions. I recommend this book to all serious scholars at the senior level and beyond, -as a reference book-.
This is a fairly good book; however, it is more like a 3rd edition of the Complete Guide to Semiconductor Devices by the second author Ng than the expected updated edition of Sze's classic. Many of the figures are the same as in Ng's book, and although more topics are covered than in Sze's 2nd Ed, the theory of what is covered is often less in-depth. This is a nice book to have, especially if you do not have a copy of Ng's book, but I would not get rid of your 2nd edition of Sze yet. I am giving it 3 stars not because it is a bad book, but I truly believe there is a great deal of similarity between this 3rd Ed of Sze and the 2nd Ed of Ng's book, and I feel a little disappointed.
This book is one of the major references for people in the scientific end of the semiconductor field. It is a good reference for practicing scientists in the semiconductor and applied solid-state physics fields. It contains good treatments of most of the topics expected in a semiconductor physics book. Surprisingly, its readability remains high for a work of this breadth. This is not a mainstream book for dilettantes.
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Monte Carlo Simulation of Semiconductor Devices
Joint Soviet-American Workshop on the Physics of Semiconductor Lasers
Analysis of Charge Transport: A Mathematical Study of Semiconductor Devices
Analysis and Simulation of Semiconductor Devices
Physical Limitations of Semiconductor Devices
The dimensions of modern semiconductor devices are reduced to the point where classical semiconductor theory, including the concepts of continuous particle concentration and continuous current, ...
Three-Dimensional Simulation of Semiconductor Devices
Characterization of Semiconductor Heterostructures and Nanostructures” is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the ...