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Microelectronics Circuit Analysis and Design, 4th Edition, Donald A Neamen, ISBN-10: 0073380644, ISBN-13: 9780073380643, McGraw-hill(©2010), SM
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The book is devoted to a new direction - heteromagnetic microelectronics, microsystems of active type, research and development which will lead to the creation of new types of devices, CHIP’S, ...
This thoroughly revised and updated three volume set continues to be the standard reference in the field, providing the latest in microelectronics design methods, modeling tools, simulation ...
Microelectronics: Circuit Analysis and Design is intended as a core text in electronics for undergraduate electrical and computer engineering students. The fourth edition continues to ...
The Microelectronics Revolution is a comprehensive guide to the silicon chip revolution and its impact on society. The distinguished contributors to this volume explain in turn the origins and ...
In the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary ...
This book is designed to give electrical engineers the RF microelectronics background they need to design state-of-the-art consumer electronics and communications devices.RF ...
"Microelectronics: Circuit Analysis and Design" is intended as a core text in electronics for undergraduate electrical and computer engineering students. The fourth edition continues to provide a ...
Field emission is a phenomenon described by quantum mechanics. Its emission capability is millions times higher than that of any other known types of electron emission. Nowadays this phenomenon is ...
Outlines the fundamental solid-state physics concepts that explain the new properties of matter caused by the reduction of solids to the nanometer scale. This book also explores the applications of ...
Focusing on the relationship between processing and the structure of the thin-film, this work takes into consideration the following potential influencing factors: crystal defects, void structure, ...