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Principles of Electronic Materials and Devices, Third Edition, is a greatly enhanced version of the highly successful text Principles of Electronic Materials and Devices, Second Edition. It is ...
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru–Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the ...
This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. ...
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of ...
In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy ...
Presents the advances in the techniques of mechanical testing on the micro- and nanoscales, which are necessary for characterizing the mechanical properties of low-dimensional materials and ...
Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. ...
Organic Light Emitting Devices: Synthesis, Properties and Applications
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and ...
Written by some of the most talented young chemists in Europe, this text covers most of the groundbreaking issues in materials science. It provides an account of the latest research results in ...