SMD ESD Protection Diode
CPDZ3V3U-HF
RoHS Device
Halogen Free
Features
0201/DFN0603
- Uni-directional ESD protection.
- Surface mount package.
0.026(0.670)
0.022(0.570)
- Ultra small SMD package:0201
- High component density.
0.015(0.370)
0.011(0.270)
- Low clamping voltage.
- Low leakage.
Mechanical data
0.013(0.335)
0.010(0.265)
-Case: 0201/DFN0603 standard package,
0.012(0.285)
molded plastic.
0.008(0.215)
0.007(0.175)
0.004(0.105)
-Terminals: Gold plated, solderable per MIL-STD-750,
method 2026.
-Marking code: Cathode band & C
0.011(0.285)
-Mounting position: Any
0.008(0.215)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Rating AND Electrical Characteristics
(at TA=25C unless otherwise noted)
Parameter
Conditions
Symbol Min
Typ Max Unit
Reverse stand-off voltage
VRWM
3.3
V
Breakdown voltage
IR = 1mA
VBR
5.7
6.2
6.7
V
Forward voltage
IF = 20 mA
VF
1.2
V
Leakage current
VR = 3.3V
IL
0.1
uA
Junction capacitance
VR = 0V, f=1MHZ
CT
35
pF
IEC 61000-4-2(air)
30
kV
ESD capability
ESD
IEC 61000-4-2(contact)
30
kV
IPP = 1A,TP=8/20us
7.5
V
Clamping voltage
VC
IPP = 6.5A,TP=8/20us
10.6
V
Peak pulse power
TP=8/20us
PPP
75
W
Operation temperature
TOP
-40
125
C
Storage temperature
TSTG
-55
150
C
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 1
QW-JP027
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDZ3V3U-HF)
Fig. 1 - 8/20us Peak pulse current wave
Fig. 2 - Power rating derating curve
form acc. IEC 61000-4-5
100%
8 us to 100%
120
Mounting on glass epoxy PCBs
80%
100
)
80
60%
,

(
%
M
g
P
t
i
n
I P
60
20 us to 50us
40%
r

r
a
e
w
o
40
P
20%
20
0%
0
0
10
20
30
40
0
25
50
75
100
125
150
Time, (us)
Ambient temperature, ( C )
Fig. 3 - Clamping volatage vs.
Fig. 4 - Forward volatage vs.
peak pulse current
forward current
11.0
11.0
8/20us waveform
8/20us waveform
)
9.0
10.0
)

(
V
C

(
V
F
,
V
e
,
V
7.0
g
e
g
l
t
a
9.0
o
l
t
a
o

v
g

v
5.0
i
n
r
d
p
a
m
r
w
l
a
8.0
o
C
F
3.0
7.0
1.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
1.0
4.0
7.0
10.0
13.0
16.0
19.0
22.0
Peak pulse current,IPP (A)
Forward current,IF (A)
Fig. 5 - Capacitance between
terminals characteristics
35.0
)
f=1MHz
F
TA=25C
,

(
P
l
s
a
i
n
30.0
r
m

t
e
n
e
e
t
w
e

b
25.0
e
c
n
i
t
a
c
a
p
a
C
20.0
0
1
2
3
4
Reverse voltage, (V)
REV: A
Page 2
QW-JP027
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
F
W
B
Polarity
A
P
C
120 o
D2
D1 D
W1
Trailer
Device
Leader
.......
.......
.......
.......
End
.......
.......
.......
.......
Start
10 pitches (min)
10 pitches (min)
Direction of Feed
SYMBOL
A
B
C
d
D
D1
D2
0201
(mm)
0.39 +0.03/-0.02
0.72
0.03
0.36
0.03
1.50 + 0.10
178
1.00
54.4 0.40
13.0
0.20
(DFN0603)
(inch)
0.015 +0.001/0.001
0.028
0.001
0.014 0.001
0.059 + 0.004
7.008
0.039
2.142 0.016
0.512
0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
0201
(mm)
1.75
0.10
3.50
0.05
2.00
0.05
4.00
0.05
2.00
0.05
0.23
0.05
8.00
0.10
12.30 0.10
(DFN0603)
(inch)
0.069
0.004 0.138
0.002 0.079
0.004 0.157
0.004 0.079
0.004 0.009
0.002 0.315
0.008 0.484 0.004
REV: A
Page 3
QW-JP027
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
CSo
M D D m
i o d e S c
p e h
c i a l i i
s tp
Marking Code
Part Number
Marking Code
C
CPDZ3V3U-HF
C
Suggested PAD Layout
0201(DFN0603)
E
SIZE
(mm)
(inch)
D
A
0.310
0.122
B
C
0.200
0.079
C
0.350
0.014
B
D
A
0.150
0.006
E
0.365
0.014
Standard Packaging
Qty Per Reel
Reel Size
Case Type
(Pcs)
(inch)
0201(DFN0603)
8,000
7
REV: A
QW-JP027
Page 4

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