SMD ESD Protection Diode
CPDZ9V0U-HF
RoHS Device
Halogen Free
Features
0201/DFN0603
-Uni-directional ESD protection.
0.026(0.670)
0.022(0.570)
-High reliability.
-Designed for mounting on small surface.
0.015(0.370)
0.011(0.270)
-Extremely thin/leadless package.
Mechanical data
-Case: 0201/DFN0603 standard package,
0.013(0.335)
0.010(0.265)
molded plastic.
0.012(0.285)
-Terminals: Gold plated, solderable per MIL-STD-750,
0.008(0.215)
0.007(0.175)
method 2026.
0.004(0.105)
-Marking code: Cathode band & J
-Mounting position: Any
0.011(0.285)
0.008(0.215)
Circuit diagram
Dimensions in inches and (millimeter)
Maximum Rating AND Electrical Characteristics
(at TA=25C unless otherwise noted)
Parameter
Conditions
Symbol Min
Typ Max Unit
Reverse stand-off voltage
VRWM
9.0
V
Breakdown voltage
IR = 5mA
VBD
10
12
14
V
Forward voltage
IF = 10 mA
VF
1.0
V
Leakage current
VR = 9.0V
IR
1.0
uA
IEC 61000-4-2(air)
30
kV
ESD capability
ESD
IEC 61000-4-2(contact)
30
kV
IPP = 1A,TP=8/20us
15.0
Clamping voltage
VC
V
IPP = 2A,TP=8/20us
17.5
Peak pulse power
tp= 8/20
PPP
350
mW
Junction capacitance
VR = 0V,f =1MHz
CT
14
pF
Operation temperature
Tj
-55
150
C
Storage temperature
TSTG
-55
150
C
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 1
QW-JP026
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDZ9V0U-HF)
Fig. 1 - 8/20us Peak pulse current wave
Fig.2 - Current derating curve
form acc. IEC 61000-4-5
100%
8 us to 100%
)
100
80%
t
,

(
%
n
r
r
e
80
60%
u

c
M
P
r
d
I P
a
60
20 us to 50us
r
w
40%

f
o
e
40
g
r
a
20%
e
v
20
A
0%
0
0
10
20
30
40
0
25
50
75
100
125
150
O
Ambient temperature, ( C)
Time (us)
Fig. 3 - Clamping volatage vs.
Fig.4 - Capacitance of diode
peak pulse current

20
15
f = 1 MHz
)
Ta = 25C
19
F
)
,

(
P
s
12

(
V
e
C
18
d
,
V
i
o
e
g
f

d
l
t
a
17
9

o
o
e

v
c
g
n
i
n
p
16
i
t
a
c
m
a
l
a
p
6
C
a
15
C
8/20us waveform
14
3
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
Peak pulse current,IPP (A)
Reverse voltage, (V)
Fig. 5 - Forward characteristics
Fig. 6 - Reverse characteristics
100
10.0 00
150C
125C

)
1.0 00

)
A
A
100C
10
O
t
,

(

u
150 C
t
,

(
m
n
0.1 00
n
r
r
e
r
r
e
u
u

c
75C

c
O
50C
e
0.0 10
r
d
125 C
a
25C
r
s
1
e
r
w
v
O
o
e
25 C
F
R
0.0 01
0
0.0 001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
2
4
6
8
10
Forward voltage, (mV)
Reverse voltage, (V)
REV: A
Page 2
QW-JP026
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
Fig. 5 - VF Dispersion Map
Fig. 6 - IR Dispersion Map
Fig. 7 - CT Dispersion Map
15
O
870
0.0 10
O
O
Ta=25 C
Ta=25 C
Ta=25 C
F=1MHz
IF=10mA
VR=9V
VR=0V
)
n=20pcs
)
n=20pcs
14
n=10pcs
V
n
860
A 0.009
e
e
)
,

(
m
F
t
w
e
t
,

(
u
e
g
n
,
(
p
850
0.0 07

b
13
l
s
l
t
a
r
r
e
e
a
o
u
c
n
i
n

v

c
840
e
r
d
0.0 05
i
t
a
r
m 12
a
r
s
c
e
a
r
w
v
p
AVG:12.56pF
o
e
a
F
830
R 0.003
C








t
e
11
AVG:856.354mV
AVG:0.0061uA
820
0.0 01
10
REV: A
Page 2
QW-JP026
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
F
W
B
Polarity
A
P
C
120 o
D2
D1 D
W1
Trailer
Device
Leader
.......
.......
.......
.......
End
.......
.......
.......
.......
Start
10 pitches (min)
10 pitches (min)
Direction of Feed
SYMBOL
A
B
C
d
D
D1
D2
0201
(mm)
0.39 +0.03/-0.02
0.72
0.03
0.36
0.03
1.50 + 0.10
178
1.00
54.4 0.40
13.0
0.20
(DFN0603)
(inch)
0.015 +0.001/0.001
0.028
0.001
0.014 0.001
0.059 + 0.004
7.008
0.039
2.142 0.016
0.512
0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
0201
(mm)
1.75
0.10
3.50
0.05
2.00
0.05
4.00
0.05
2.00
0.05
0.23
0.05
8.00
0.10
12.30 0.10
(DFN0603)
(inch)
0.069
0.004 0.138
0.002 0.079
0.004 0.157
0.004 0.079
0.004 0.009
0.002 0.315
0.008 0.484 0.004
REV: A
Page 3
QW-JP026
Comchip Technology CO., LTD.

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SMD ESD Protection Diode
CSo
M D D m
i o d e S c
p e h
c i a l i i
s tp
Marking Code
Part Number
Marking Code
J
CPDZ9V0U-HF
J
Suggested PAD Layout
0201(DFN0603)
SIZE
E
(mm)
(inch)
D
A
0.310
0.122
B
0.200
0.079
C
C
0.350
0.014
D
0.150
0.006
B
A
E
0.365
0.014
Standard Packaging
Qty Per Reel
Reel Size
Case Type
(Pcs)
(inch)
0201(DFN0603)
8,000
7
REV: A
QW-JP026
Page 4

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Document Outline

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